Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this response can range over several orders of magnitude, from 10 picowatt/cm2 to several hundred MW/cm2. Our knowledgeable and friendly staff are available to support the design of photodiodes from concept through final application of the product in manufacturing. Design flexibility has made photodiodes a component of choice for many applications as low-cost silicon wafer fabrication technologies continue to provide high reliability and long-term performance.
- Low leakage devices
- P on N type
- State of the art class 1000 clean room
- Computer aided designs
- Custom Packaging
- Hybrid Capabilities
- Low micro-inch pattern geometries
- Interdigitated arrays for encoder applications
Shadow Technology: (interdigitated sensing technology)
Shadow Technology sensor designs provide several distinct advantages over traditional differential sensing encoder systems. The ability of this technology to discriminate typical optical system errors as common mode noise increases performance reliability while simplifying manufacturing requirements for optical encoders.
Engineering to Packaging In One Convenient Location:
From on-line shematics to custom packaging for simplified assembly, we supply all your electro-optical component needs at Quantum Devices’ central midwest loction. Our engineering expertise, advanced technology, highly controlled manufacturing quality, stable domestic work force, and customer parts inventory for just-in-time delivery, make Quantum Devices an invaluable manufacturing partner.
To learn more about our Photodiode capabilities contact us.